IRFD224 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 250V 630MA 4DIP
| Part | FET Type | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Technology | Drain to Source Voltage (Vdss) | Vgs (Max) | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 1.1 Ohm | -55 °C | 150 °C | 260 pF | 4-DIP (0.300" 7.62mm) | 630 mA | 14 nC | Through Hole | 1 W | 10 V | MOSFET (Metal Oxide) | 250 V | 20 V | 4 V |
Vishay General Semiconductor - Diodes Division | N-Channel | 1.1 Ohm | -55 °C | 150 °C | 260 pF | 4-DIP (0.300" 7.62mm) | 630 mA | 14 nC | Through Hole | 1 W | 10 V | MOSFET (Metal Oxide) | 250 V | 20 V | 4 V |