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SOT428-2
Discrete Semiconductor Products

GANE240-700BBAZ

Active
Nexperia USA Inc.

700 V, 240 MOHM GALLIUM NITRIDE (GAN) FET IN DPAK PACKAGE

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Search across all available documentation for this part.

DocumentsGate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETsDPAK; Reel dry pack for SMD, 13"; Q2/T3 product orientation+3
SOT428-2
Discrete Semiconductor Products

GANE240-700BBAZ

Active
Nexperia USA Inc.

700 V, 240 MOHM GALLIUM NITRIDE (GAN) FET IN DPAK PACKAGE

Deep-Dive with AI

DocumentsGate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETsDPAK; Reel dry pack for SMD, 13"; Q2/T3 product orientation+3

Technical Specifications

Parameters and characteristics for this part

SpecificationGANE240-700BBAZ
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Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 50$ 4.11

Description

General part information

GANE240-700BBA Series

The GANE240-700BBA is a general purpose 700 V, 240 mΩ Gallium Nitride (GaN) FET in a DPAK package. It is a normally-off e-mode device offering superior performance.