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GANE240-700BBAZActive
Nexperia USA Inc.
700 V, 240 MOHM GALLIUM NITRIDE (GAN) FET IN DPAK PACKAGE
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Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs
DPAK; Reel dry pack for SMD, 13"; Q2/T3 product orientation