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Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5005 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 hFE |
| Mounting Type | Stud Mount |
| Package / Case | TO-210AA, Stud, TO-59-4 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-59 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 281.05 | |
| Microchip Direct | N/A | 1 | $ 302.68 | |
| Newark | Each | 100 | $ 281.06 | |
| 500 | $ 270.25 | |||
Description
General part information
2N5005-Transistor Series
This specification covers the performance requirements for PNP, silicon, through hole power, 2N5003 and 2N5005 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type and two levels of product assurance (JANHC and JANKC) are provided for unencapsulated devices as specified in MIL-PRF-19500/535. The device package outline is a TO-210AA (formerly TO-59) for all encapsulated device types.
Documents
Technical documentation and resources