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MURB1620CTT4G
Discrete Semiconductor Products

NJVMJB44H11T4G

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ON Semiconductor

BIPOLAR POWER TRANSISTOR, NPN, 10 A, 80 V, 50 WATT

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MURB1620CTT4G
Discrete Semiconductor Products

NJVMJB44H11T4G

Active
ON Semiconductor

BIPOLAR POWER TRANSISTOR, NPN, 10 A, 80 V, 50 WATT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNJVMJB44H11T4G
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 hFE
Frequency - Transition50 MHz
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]2 W
Supplier Device PackageD2PAK
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.55
10$ 1.27
100$ 0.99
Digi-Reel® 1$ 1.55
10$ 1.27
100$ 0.99
Tape & Reel (TR) 800$ 0.71
1600$ 0.65
2400$ 0.62
4000$ 0.59
5600$ 0.58
NewarkEach (Supplied on Cut Tape) 1$ 1.61
10$ 1.21
25$ 1.09
50$ 0.98
100$ 0.87
250$ 0.87
500$ 0.86
ON SemiconductorN/A 1$ 0.62

Description

General part information

MJB44H11 Series

The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.