MJB44H11 Series

Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt

Catalog

Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt

Part	Mounting Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Transistor Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce	Operating Temperature [Min]	Operating Temperature [Max]
ON Semiconductor NJVMJB44H11T4G	Surface Mount	50 MHz	80 V	D2PAK	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	10 µA	2 W	NPN	1 V	40 hFE	-55 °C	150 °C

Catalog

Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt

Key Features

• Low Collector-Emitter Saturation Voltage -VCE(sat)= 1.0 V (Max) @ 8.0 A

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant

Description

The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.