Discrete Semiconductor Products

IAUC120N04S6N010ATMA1

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INFINEON’S IAUC120N04S6N010 IS A 120 V MOSFET FOR POWER MANAGEMENT WITH LOW RDS(ON) AND HIGH EFFICIENCY. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

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DocumentsTechnical Data Sheet EN

Discrete Semiconductor Products

IAUC120N04S6N010ATMA1

Active

INFINEON

INFINEON’S IAUC120N04S6N010 IS A 120 V MOSFET FOR POWER MANAGEMENT WITH LOW RDS(ON) AND HIGH EFFICIENCY. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.

Deep-Dive with AI

DocumentsTechnical Data Sheet EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IAUC120N04S6N010ATMA1

Current - Continuous Drain (Id) @ 25°C	150 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	7 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	108 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	6878 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	150 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.03 mOhm
Supplier Device Package	PG-TDSON-8-34
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

IAUC120 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Mounting Type	Grade	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs
INFINEON IAUC120N04S6L012ATMA1	175 °C	-55 °C	115 W	Surface Mount	Automotive	120 A	80 nC	MOSFET (Metal Oxide)	8-PowerTDFN	PG-TDSON-8	1.21 mOhm	2 V	4832 pF	16 V	AEC-Q101	4.5 V 10 V	N-Channel	40 V
INFINEON IAUC120N04S6N010ATMA1	175 °C	-55 °C	150 W	Surface Mount	Automotive	150 A	108 nC	MOSFET (Metal Oxide)	8-PowerTDFN	PG-TDSON-8-34	1.03 mOhm	3 V	6878 pF	20 V	AEC-Q101	7 V 10 V	N-Channel	40 V
INFINEON IAUC120N04S6L005ATMA1	175 °C	-55 °C	187 W	Surface Mount	Automotive	120 A	177 nC	MOSFET (Metal Oxide)	8-PowerTDFN	PG-TDSON-8-53		2 V		16 V	AEC-Q101	4.5 V 10 V	N-Channel	40 V	11203 pF
INFINEON IAUC120N04S6N006ATMA1	175 °C	-55 °C	187 W	Surface Mount	Automotive	120 A	151 nC	MOSFET (Metal Oxide)	8-PowerTDFN	PG-TDSON-8-53	0.6 mOhm	3 V		20 V	AEC-Q101	7 V 10 V	N-Channel	40 V	10117 pF
INFINEON IAUC120N06S5N017ATMA1	175 °C	-55 °C	167 W	Surface Mount	Automotive	120 A	95.9 nC	MOSFET (Metal Oxide)	8-PowerTDFN	PG-TDSON-8-43	1.7 mOhm	3.4 V		20 V	AEC-Q101		N-Channel	60 V	6952 pF
INFINEON IAUC120N04S6N013ATMA1	175 °C	-55 °C	115 W	Surface Mount	Automotive	120 A		MOSFET (Metal Oxide)	8-PowerTDFN	PG-TDSON-8	1.34 mOhm	3 V		20 V	AEC-Q101	7 V 10 V	N-Channel	40 V	4260 pF	68 nC
INFINEON IAUC120N04S6L009ATMA1	175 °C	-55 °C	150 W	Surface Mount	Automotive	150 A	128 nC	MOSFET (Metal Oxide)	8-PowerTDFN	PG-TDSON-8-34	960 mOhm	2 V		16 V	AEC-Q101	4.5 V 10 V	N-Channel	40 V	7806 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.21
		10	$ 1.84
		100	$ 1.46
		500	$ 1.24
		1000	$ 1.05
		2000	$ 1.00
	Digi-Reel®	1	$ 2.21
		10	$ 1.84
		100	$ 1.46
		500	$ 1.24
		1000	$ 1.05
		2000	$ 1.00
	N/A	14779	$ 2.68
	Tape & Reel (TR)	5000	$ 0.96
		10000	$ 0.93
Newark	Each (Supplied on Cut Tape)	1	$ 2.24
		10	$ 1.61
		25	$ 1.46
		50	$ 1.31
		100	$ 1.15
		250	$ 1.05
		500	$ 0.96

Description

General part information

IAUC120 Series

Say goodbye to old technology and unlock new levels of performance with Infineon's latest product,IAUCN04S7N009. Discover the enhanced efficiency and reliability of our newest technology withIAUCN04S7N009

Documents

Technical documentation and resources

Technical Data Sheet EN

Datasheet