Discrete Semiconductor Products

JAN1N5615

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UFR,FRR A-BODY ROHS COMPLIANT: YES

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Discrete Semiconductor Products

Active

UFR,FRR A-BODY ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	JAN1N5615

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 nA
Grade	Military
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	A, Axial
Qualification	MIL-PRF-19500/429
Reverse Recovery Time (trr)	150 ns
Speed	200 mA, 500 ns
Supplier Device Package	A, Axial
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.6 V

Part	Current - Reverse Leakage @ Vr	Technology	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Reverse Recovery Time (trr)	Speed	Mounting Type	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Package / Case	Qualification
Microchip Technology 1N5615US/TR	500 nA	Standard	D-5A	175 ░C	-65 C	1 A	150 ns	200 mA 500 ns	Surface Mount	45 pF	1.6 V	200 V
Microchip Technology JAN1N5615	500 nA	Standard	A Axial	175 ░C	-65 C	1 A	150 ns	200 mA 500 ns	Through Hole		1.6 V	200 V	Military	A Axial	MIL-PRF-19500/429

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 1A Through Hole A, Axial

Technical documentation and resources