Discrete Semiconductor Products

SIDR610EP-T1-RE3

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N-CHANNEL 200 V (D-S) 175C MOSFE

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Discrete Semiconductor Products

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N-CHANNEL 200 V (D-S) 175C MOSFE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDR610EP-T1-RE3

Current - Continuous Drain (Id) @ 25°C	8.9 A, 39.6 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	1380 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	150 W, 7.5 W
Supplier Device Package	PowerPAK® SO-8DC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Mounting Type	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SIDR610EP-T1-RE3	8.9 A 39.6 A	PowerPAK® SO-8DC	PowerPAK® SO-8	Surface Mount	4 V	MOSFET (Metal Oxide)	38 nC	20 V	N-Channel	10 V	7.5 V	-55 °C	175 ░C	1380 pF	7.5 W 150 W	200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.73
	Digi-Reel®	1	$ 4.73
	Tape & Reel (TR)	6000	$ 1.69

General part information

N-Channel 200 V 8.9A (Ta), 39.6A (Tc) 7.5W (Ta), 150W (Tc) Surface Mount PowerPAK® SO-8DC

Technical documentation and resources