SIDR610 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 200 V (D-S) 175C MOSFE
| Part | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Package / Case | Mounting Type | Vgs(th) (Max) @ Id | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 8.9 A 39.6 A | PowerPAK® SO-8DC | PowerPAK® SO-8 | Surface Mount | 4 V | MOSFET (Metal Oxide) | 38 nC | 20 V | N-Channel | 10 V | 7.5 V | -55 °C | 175 ░C | 1380 pF | 7.5 W 150 W | 200 V |