Specification	IPW60R125P6XKSA1

Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2660 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	219 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPW60R125 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPW60R125CPFKSA1	10 V	PG-TO247-3-1	MOSFET (Metal Oxide)	70 nC	125 mOhm	N-Channel	150 °C	-55 °C	25 A	2500 pF	600 V	Through Hole	208 W	3.5 V	20 V	TO-247-3
INFINEON IPW60R125CFD7XKSA1	10 V	PG-TO247-3	MOSFET (Metal Oxide)	36 nC		N-Channel	150 °C	-55 °C	18 A	1503 pF	600 V	Through Hole		4.5 V	20 V	TO-247-3	125 mOhm	92 W
INFINEON IPW60R125P6XKSA1	10 V	PG-TO247-3	MOSFET (Metal Oxide)	56 nC		N-Channel	150 °C	-55 °C	30 A		600 V	Through Hole		4.5 V	20 V	TO-247-3	125 mOhm	219 W	2660 pF
INFINEON IPW60R125C6FKSA1	10 V	PG-TO247-3-1	MOSFET (Metal Oxide)	96 nC		N-Channel	150 °C	-55 °C	30 A		600 V	Through Hole		3.5 V	20 V	TO-247-3	125 mOhm	219 W	2127 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	240	$ 1.96
Digikey	N/A	179	$ 3.69
	Tube	240	$ 2.57
Newark	Each	1	$ 3.50
		10	$ 3.39
		25	$ 3.29
		50	$ 3.17
		100	$ 3.15
		480	$ 3.12

Description

General part information

IPW60R125 Series

InfineonsCoolMOS™ P6 superjunction MOSFETfamily is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.

Documents

Technical documentation and resources

IPW60R125P6XKSA1

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IPW60R125P6XKSA1

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Technical Specifications

IPW60R125 Series

Pricing

Description

IPW60R125 Series

Documents

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IPW60R125 Series