Discrete Semiconductor Products

IPW60R125CPFKSA1

NRND

INFINEON

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 125 MOHM;

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DocumentsDatasheet Application Note EN

Discrete Semiconductor Products

IPW60R125CPFKSA1

NRND

INFINEON

COOLMOS™ CP N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 125 MOHM;

Deep-Dive with AI

DocumentsDatasheet Application Note EN

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R125CPFKSA1

Current - Continuous Drain (Id) @ 25°C	25 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	208 W
Rds On (Max) @ Id, Vgs [Max]	125 mOhm
Supplier Device Package	PG-TO247-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPW60R125 Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	FET Type	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]
INFINEON IPW60R125CPFKSA1	10 V	PG-TO247-3-1	MOSFET (Metal Oxide)	70 nC	125 mOhm	N-Channel	150 °C	-55 °C	25 A	2500 pF	600 V	Through Hole	208 W	3.5 V	20 V	TO-247-3
INFINEON IPW60R125CFD7XKSA1	10 V	PG-TO247-3	MOSFET (Metal Oxide)	36 nC		N-Channel	150 °C	-55 °C	18 A	1503 pF	600 V	Through Hole		4.5 V	20 V	TO-247-3	125 mOhm	92 W
INFINEON IPW60R125P6XKSA1	10 V	PG-TO247-3	MOSFET (Metal Oxide)	56 nC		N-Channel	150 °C	-55 °C	30 A		600 V	Through Hole		4.5 V	20 V	TO-247-3	125 mOhm	219 W	2660 pF
INFINEON IPW60R125C6FKSA1	10 V	PG-TO247-3-1	MOSFET (Metal Oxide)	96 nC		N-Channel	150 °C	-55 °C	30 A		600 V	Through Hole		3.5 V	20 V	TO-247-3	125 mOhm	219 W	2127 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.82
	Tube	240	$ 3.56
Newark	Each	1	$ 6.32
		10	$ 5.31
		25	$ 4.97
		50	$ 4.64
		100	$ 4.30
		480	$ 4.28
		720	$ 3.81

Description

General part information

IPW60R125 Series

The IPW60R125CP is a 650V CoolMOS™ N-channel Power MOSFET features ultra-low gate charge. It is designed for hard switching topologies, server and telecom applications.