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PHPT60603PY-QX
Discrete Semiconductor Products

PHPT60603PY-QX

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 3 A PNP HIGH POWER BIPOLAR TRANSISTOR

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Search across all available documentation for this part.

Documentsplastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body60 V, 3 A PNP high power bipolar transistor+6
PHPT60603PY-QX
Discrete Semiconductor Products

PHPT60603PY-QX

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 60 V, 3 A PNP HIGH POWER BIPOLAR TRANSISTOR

Deep-Dive with AI

Documentsplastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body60 V, 3 A PNP high power bipolar transistor+6

Technical Specifications

Parameters and characteristics for this part

SpecificationPHPT60603PY-QX
Current - Collector (Ic) (Max) [Max]3 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]150
Frequency - Transition110 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-100, SOT-669
Power - Max [Max]1.25 W
QualificationAEC-Q101
Supplier Device PackagePower-SO8, LFPAK56
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic360 mV
Voltage - Collector Emitter Breakdown (Max) [Max]60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.23
MouserN/A 1$ 0.62
10$ 0.42
100$ 0.29
500$ 0.25
1500$ 0.21
9000$ 0.21
24000$ 0.21

Description

General part information

PHPT60603PY-Q Series

PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.