Catalog
60 V, 3 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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60 V, 3 A PNP high power bipolar transistor
60 V, 3 A PNP high power bipolar transistor
| Part | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Current - Collector (Ic) (Max) [Max] | Package / Case | Qualification | Transistor Type | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Grade | Supplier Device Package | Frequency - Transition | Operating Temperature | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 1.25 W | 360 mV | 150 | 3 A | SC-100 SOT-669 | AEC-Q101 | PNP | 100 nA | 60 V | Automotive | LFPAK56 Power-SO8 | 110 MHz | 175 °C | Surface Mount |