Discrete Semiconductor Products
PSMN2R3-100SSJJ
ActiveNexperia USA Inc.
N-CHANNEL 100 V, 2.3 MOHM ASFET WITH ENHANCED DYNAMIC CURRENT SHARING IN LFPAK88
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Discrete Semiconductor Products
PSMN2R3-100SSJJ
ActiveNexperia USA Inc.
N-CHANNEL 100 V, 2.3 MOHM ASFET WITH ENHANCED DYNAMIC CURRENT SHARING IN LFPAK88
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN2R3-100SSJJ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 255 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 395 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 29960 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-1235 |
| Power Dissipation (Max) | 500 W |
| Rds On (Max) @ Id, Vgs | 2.3 mOhm |
| Supplier Device Package | LFPAK88 (SOT1235) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 3.06 | |
Description
General part information
PSMN2R3-100SSJ Series
In high-power applications, it is common practice to connect two or more MOSFETs in parallel to provide high current capability. Even when the gates are driven from the same gate driver, it can be challenging to ensure that MOSFETs share the load current equally.
Documents
Technical documentation and resources