Integrated Circuits (ICs)

LM5111-2M

Obsolete

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

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Integrated Circuits (ICs)

LM5111-2M

Obsolete

Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	LM5111-2M

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	5 A
Current - Peak Output (Source, Sink) [custom]	3 A
Driven Configuration	Low-Side
Gate Type	N-Channel MOSFET
Input Type	Inverting
Logic Voltage - VIL, VIH [custom]	2.2 V
Logic Voltage - VIL, VIH [custom]	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 ¯C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	12 ns
Rise / Fall Time (Typ) [custom]	14 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	14 V
Voltage - Supply [Min]	3.5 V

LM5111 Series

5-A/3-A dual channel gate driver with active high or low output 4-V UVLO

Part	Gate Type	Input Type	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Channel Type	Number of Drivers	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Package / Case [custom]	Package / Case [custom]
Texas Instruments LM5111-2MX	N-Channel MOSFET	Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-1MY/NOPB	N-Channel MOSFET	Non-Inverting	8-MSOP 8-PowerTSSOP			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V	3 mm	0.118 in
Texas Instruments LM5111-3MX	N-Channel MOSFET	Inverting Non-Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-2M	N-Channel MOSFET	Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-4MY/NOPB	N-Channel MOSFET	Inverting Non-Inverting	8-MSOP 8-PowerTSSOP			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V	3 mm	0.118 in
Texas Instruments LM5111-1MYX/NOPB	N-Channel MOSFET	Non-Inverting	8-MSOP 8-PowerTSSOP			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V	3 mm	0.118 in
Texas Instruments LM5111-1M/NOPB	N-Channel MOSFET	Non-Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-2MYX	N-Channel MOSFET	Inverting	8-MSOP 8-PowerTSSOP			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V	3 mm	0.118 in
Texas Instruments LM5111-3MX/NOPB	N-Channel MOSFET	Inverting Non-Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-3MY	N-Channel MOSFET	Inverting Non-Inverting	8-MSOP 8-TSSOP Exposed Pad			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V		0.118 in 3 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

LM5111 Series

The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Eachcompoundoutput driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhancedMSOP-PowerPAD package.

Documents

Technical documentation and resources