LM5111 Series

5-A/3-A dual channel gate driver with active high or low output 4-V UVLO

Catalog

5-A/3-A dual channel gate driver with active high or low output 4-V UVLO

Part	Gate Type	Input Type	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Channel Type	Number of Drivers	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Driven Configuration	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Package / Case [custom]	Package / Case [custom]
Texas Instruments LM5111-2MX	N-Channel MOSFET	Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-1MY/NOPB	N-Channel MOSFET	Non-Inverting	8-MSOP 8-PowerTSSOP			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V	3 mm	0.118 in
Texas Instruments LM5111-3MX	N-Channel MOSFET	Inverting Non-Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-2M	N-Channel MOSFET	Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-4MY/NOPB	N-Channel MOSFET	Inverting Non-Inverting	8-MSOP 8-PowerTSSOP			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V	3 mm	0.118 in
Texas Instruments LM5111-1MYX/NOPB	N-Channel MOSFET	Non-Inverting	8-MSOP 8-PowerTSSOP			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V	3 mm	0.118 in
Texas Instruments LM5111-1M/NOPB	N-Channel MOSFET	Non-Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-2MYX	N-Channel MOSFET	Inverting	8-MSOP 8-PowerTSSOP			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V	3 mm	0.118 in
Texas Instruments LM5111-3MX/NOPB	N-Channel MOSFET	Inverting Non-Inverting	8-SOIC	3.9 mm	0.154 in	Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-SOIC	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V
Texas Instruments LM5111-3MY	N-Channel MOSFET	Inverting Non-Inverting	8-MSOP 8-TSSOP Exposed Pad			Surface Mount	12 ns	14 ns	5 A	3 A	Independent	2	3.5 V	14 V	8-HVSSOP	-40 °C	125 ¯C	Low-Side	2.2 V	0.8 V		0.118 in 3 mm

Catalog

5-A/3-A dual channel gate driver with active high or low output 4-V UVLO

Key Features

• Independently Drives Two N-Channel MOSFETsCompound CMOS and Bipolar Outputs Reduce Output Current Variation5-A Sink and 3-A Source Current CapabilityTwo Channels can be Connected in Parallel to Double the Drive CurrentIndependent Inputs (TTL Compatible)Fast Propagation Times (25 ns Typical)Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)Available in Dual Noninverting, Dual Inverting and Combination ConfigurationsSupply Rail Undervoltage Lockout Protection (UVLO)ƒLM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_BPin Compatible With Industry Standard Gate DriversIndependently Drives Two N-Channel MOSFETsCompound CMOS and Bipolar Outputs Reduce Output Current Variation5-A Sink and 3-A Source Current CapabilityTwo Channels can be Connected in Parallel to Double the Drive CurrentIndependent Inputs (TTL Compatible)Fast Propagation Times (25 ns Typical)Fast Rise and Fall Times (14 ns and 12 ns Rise and Fall, Respectively, With 2-nF Load)Available in Dual Noninverting, Dual Inverting and Combination ConfigurationsSupply Rail Undervoltage Lockout Protection (UVLO)ƒLM5111-4 UVLO Configured to Drive PFET through OUT_A and NFET through OUT_BPin Compatible With Industry Standard Gate Drivers

Description

The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Eachcompoundoutput driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhancedMSOP-PowerPAD package. The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Eachcompoundoutput driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhancedMSOP-PowerPAD package.