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8-VDFN
Integrated Circuits (ICs)

UCC27211DRMT

LTB
Texas Instruments

DRIVER 4.5A 2-OUT HIGH SIDE/LOW SIDE FULL BRDG/HALF BRDG NON-INV 8-PIN VSON EP T/R

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Search across all available documentation for this part.

DocumentsBootstrap Circuitry Selection for Half Bridge Configurations (Rev. A)Power Management Guide 2018 (Rev. R)+13
8-VDFN
Integrated Circuits (ICs)

UCC27211DRMT

LTB
Texas Instruments

DRIVER 4.5A 2-OUT HIGH SIDE/LOW SIDE FULL BRDG/HALF BRDG NON-INV 8-PIN VSON EP T/R

Deep-Dive with AI

DocumentsBootstrap Circuitry Selection for Half Bridge Configurations (Rev. A)Power Management Guide 2018 (Rev. R)+13

Technical Specifications

Parameters and characteristics for this part

SpecificationUCC27211DRMT
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]4 A
Current - Peak Output (Source, Sink) [custom]4 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]120 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]2.7 V
Logic Voltage - VIL, VIH [custom]1.3 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]140 °C
Operating Temperature [Min]-40 °C
Package / Case8-VDFN Exposed Pad
Rise / Fall Time (Typ) [custom]7.2 ns
Rise / Fall Time (Typ) [custom]5.5 ns
Supplier Device Package8-VSON (4x4)
Voltage - Supply [Max]17 V
Voltage - Supply [Min]8 V

UCC27211 Series

4-A, 120-V half bridge gate driver with 8-V UVLO and TTL inputs

PartDriven ConfigurationChannel TypeGate TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Mounting TypeHigh Side Voltage - Max (Bootstrap) [Max]Input TypeVoltage - Supply [Min]Voltage - Supply [Max]Current - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Number of DriversSupplier Device PackageOperating Temperature [Min]Operating Temperature [Max]Logic Voltage - VIL, VIH [custom]Logic Voltage - VIL, VIH [custom]Package / CasePackage / CasePackage / CaseLogic Voltage - VIL, VIHGradeQualification
UCC27211DR
Texas Instruments
UCC27211DR
Half-Bridge
Independent
MOSFET (N-Channel)
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
8-SOIC
-40 °C
140 °C
2.7 V
1.3 V
0.154 in
8-SOIC
3.9 mm
8-HSOP
Texas Instruments
UCC27211DDA
Half-Bridge
Independent
MOSFET (N-Channel)
N-Channel MOSFET
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
8-SO PowerPad
-40 °C
140 °C
8-PowerSOIC (0.154"
3.90mm Width)
1.3 V
2.8 V
LP3891EMR-1.8/NOPB
Texas Instruments
UCC27211AQDDARQ1
Half-Bridge
Independent
MOSFET (N-Channel)
N-Channel MOSFET
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
8-SO PowerPad
-40 °C
140 °C
8-PowerSOIC (0.154"
3.90mm Width)
1.2 V
2.55 V
Automotive
AEC-Q100
10-WFDFN Exp Pkg
Texas Instruments
UCC27211DPRT
Half-Bridge
Independent
MOSFET (N-Channel)
N-Channel MOSFET
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
10-WSON (4x4)
-40 °C
140 °C
2.7 V
1.3 V
10-WDFN Exposed Pad
8-VDFN
Texas Instruments
UCC27211DRMT
Half-Bridge
Independent
MOSFET (N-Channel)
N-Channel MOSFET
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
8-VSON (4x4)
-40 °C
140 °C
2.7 V
1.3 V
8-VDFN Exposed Pad
OPA277AIDRMT
Texas Instruments
UCC27211DRMR
Half-Bridge
Independent
MOSFET (N-Channel)
N-Channel MOSFET
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
8-VSON (4x4)
-40 °C
140 °C
2.7 V
1.3 V
8-VDFN Exposed Pad
8-pin (DRM) package image
Texas Instruments
UCC27211ADRMR
Half-Bridge
Independent
MOSFET (N-Channel)
N-Channel MOSFET
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
8-VSON (4x4)
-40 °C
140 °C
2.7 V
1.3 V
8-VDFN Exposed Pad
LP3891EMR-1.8/NOPB
Texas Instruments
UCC27211DDAR
Half-Bridge
Independent
MOSFET (N-Channel)
N-Channel MOSFET
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
8-SO PowerPad
-40 °C
140 °C
8-PowerSOIC (0.154"
3.90mm Width)
1.3 V
2.8 V
8-pin (DRM) package image
Texas Instruments
UCC27211ADRMT
Half-Bridge
Independent
MOSFET (N-Channel)
N-Channel MOSFET
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
8-VSON (4x4)
-40 °C
140 °C
2.7 V
1.3 V
8-VDFN Exposed Pad
Texas Instruments-LM5010SDX DC to DC Converter and Switching Regulator Chip Conv DC-DC 8V to 75V Step Down Single-Out 2.5V to 70V 1A 10-Pin WSON EP T/R
Texas Instruments
UCC27211DPRR
Half-Bridge
Independent
MOSFET (N-Channel)
N-Channel MOSFET
7.2 ns
5.5 ns
Surface Mount
120 V
Non-Inverting
8 V
17 V
4 A
4 A
2
10-WSON (4x4)
-40 °C
140 °C
2.7 V
1.3 V
10-WDFN Exposed Pad

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.28
10$ 2.95
25$ 2.79
100$ 2.42
Digi-Reel® 1$ 3.28
10$ 2.95
25$ 2.79
100$ 2.42
N/A 2123$ 3.16
Tape & Reel (TR) 250$ 2.29
500$ 2.06
1250$ 1.73
2500$ 1.65
6250$ 1.59
Texas InstrumentsSMALL T&R 1$ 2.75
100$ 2.27
250$ 1.63
1000$ 1.23

Description

General part information

UCC27211 Series

The UCC27211 driver is based on the popular UCC27201 MOSFET drivers, but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 3.7A source and 4.5A sink, thereby allowing for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure is now able to directly handle –10VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a maximum rating of 20V.

The switching node (HS pin) can handle –(24 – VDD) V maximum which allows the high-side channel to be protected from inherent negative voltages caused parasitic inductance and stray capacitance. UCC27211 (TTL inputs) has increased input hysteresis allowing for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 4 ns between the turnon and turnoff of each other. An on-chip 120V rated bootstrap diode eliminates the external discrete diodes.