Discrete Semiconductor Products

PCDP0865GC_T0_00601

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DIODE SIL CARB 650V 8A TO220AC

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Discrete Semiconductor Products

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DIODE SIL CARB 650V 8A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	PCDP0865GC_T0_00601

Capacitance @ Vr, F	260 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	0 ns
Speed	500 ns, 200 mA, 500 mA
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	8 A
Voltage - Forward (Vf) (Max) @ If [Max]	1.8 V

Part	Speed	Capacitance @ Vr, F	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If
Panjit International Inc. PCDP0865GC_T0_00601	200 mA 500 ns 500 mA	260 pF	SiC (Silicon Carbide) Schottky	0 ns	8 A	100 µA	Through Hole	175 ░C	-55 °C	TO-220AC	TO-220-2	650 V	1.8 V	8 A
Panjit International Inc. PCDP0865G1_T0_00001	500 mA	296 pF	SiC (Silicon Carbide) Schottky	0 ns	8 A	60 µA	Through Hole	175 ░C	-55 °C	TO-220AC	TO-220-2	650 V		1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 8A Through Hole TO-220AC

Technical documentation and resources

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