PCDP0865 Series

Catalog

DIODE SIL CARB 650V 8A TO220AC

Part	Speed	Capacitance @ Vr, F	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - Forward (Vf) (Max) @ If
Panjit International Inc. PCDP0865GC_T0_00601	200 mA 500 ns 500 mA	260 pF	SiC (Silicon Carbide) Schottky	0 ns	8 A	100 µA	Through Hole	175 ░C	-55 °C	TO-220AC	TO-220-2	650 V	1.8 V	8 A
Panjit International Inc. PCDP0865G1_T0_00001	500 mA	296 pF	SiC (Silicon Carbide) Schottky	0 ns	8 A	60 µA	Through Hole	175 ░C	-55 °C	TO-220AC	TO-220-2	650 V		1.7 V