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STMICROELECTRONICS STGWA50HP65FB2
Discrete Semiconductor Products

STGWA20HP65FB2

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STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 20 A, HIGH SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

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STMICROELECTRONICS STGWA50HP65FB2
Discrete Semiconductor Products

STGWA20HP65FB2

Active
STMicroelectronics

TRENCH GATE FIELD-STOP, 650 V, 20 A, HIGH SPEED HB2 SERIES IGBT IN A TO-247 LONG LEADS PACKAGE

Deep-Dive with AI

Documents+14

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWA20HP65FB2
Current - Collector (Ic) (Max) [Max]40 A
Current - Collector Pulsed (Icm)60 A
Gate Charge56 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]147 W
Reverse Recovery Time (trr)140 ns
Supplier Device PackageTO-247 Long Leads
Switching Energy214 µJ
Td (on/off) @ 25°C78.8 ns
Td (on/off) @ 25°C-
Test Condition20 A, 10 Ohm, 400 V, 15 V
Vce(on) (Max) @ Vge, Ic2.1 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 3.15
Tube 30$ 2.03
90$ 1.67
300$ 1.62
750$ 1.41
1500$ 1.20
3000$ 1.14
NewarkEach 1$ 3.58
10$ 2.53
120$ 2.21
510$ 1.96
1020$ 1.73
2520$ 1.66
5010$ 1.65

Description

General part information

STGWA20 Series

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat)behavior at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.