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Technical Specifications
Parameters and characteristics for this part
| Specification | RFV12TG6SGC9 |
|---|---|
| Current - Average Rectified (Io) | 12 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | 150 °C |
| Package / Case | TO-220-2 |
| Reverse Recovery Time (trr) | 45 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-220ACFP |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 2.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.08 | |
| 10 | $ 0.90 | |||
| 100 | $ 0.72 | |||
| 500 | $ 0.65 | |||
Description
General part information
RFV12TG6S Series
RFV12TG6S is the silicon epitaxial planar type Fast Recovery Diode for PFC.
Documents
Technical documentation and resources