Catalog
Super Fast Recovery Diode
Key Features
• Hyper fast recorvery / Hard recovery type, Ultra low switching loss, High current overload capacity
Description
AI
RFV12TG6S is the silicon epitaxial planar type Fast Recovery Diode for PFC.
Beta
⌘K
Super Fast Recovery Diode
Super Fast Recovery Diode
| Part | Current - Average Rectified (Io) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Technology | Package / Case | Reverse Recovery Time (trr) | Mounting Type | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 12 A | 10 µA | 150 °C | 200 mA 500 ns | 600 V | TO-220ACFP | Standard | TO-220-2 | 45 ns | Through Hole | 2.8 V |