Isolators

MOC3052SR2VM_F132

Obsolete

ON Semiconductor

OPTOISOLATOR 4.17KV TRIAC 6SMD

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Isolators

MOC3052SR2VM_F132

Obsolete

ON Semiconductor

OPTOISOLATOR 4.17KV TRIAC 6SMD

Deep-Dive with AI

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MOC3052SR2VM_F132

Approval Agency	VDE, UR
Current - DC Forward (If) (Max) [Max]	60 mA
Current - Hold (Ih)	220 µA
Current - LED Trigger (Ift) (Max) [Max]	10 mA
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Output Type	Triac
Package / Case	6-SMD, Gull Wing
Static dV/dt (Min) [Min]	1 kV/µs
Supplier Device Package	6-SMD
Voltage - Forward (Vf) (Typ)	1.18 V
Voltage - Isolation	4170 Vrms
Voltage - Off State	600 V
Zero Crossing Circuit	False

MOC3052M Series

Triac Driver Optocoupler, 6-Pin DIP Random-Phase

Part	Mounting Type	Package / Case	Voltage - Off State	Output Type	Voltage - Forward (Vf) (Typ)	Supplier Device Package	Number of Channels	Current - DC Forward (If) (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Approval Agency	Static dV/dt (Min) [Min]	Current - Hold (Ih)	Voltage - Isolation	Current - LED Trigger (Ift) (Max) [Max]	Package / Case	Package / Case	Package / Case
ON Semiconductor MOC3051SVM	Surface Mount	6-SMD Gull Wing	600 V	Triac	1.18 V	6-SMD	1	60 mA	85 °C	-40 °C	UR VDE	1 kV/µs	220 µA	4170 Vrms	15 mA
ON Semiconductor MOC3052SR2VM_F132	Surface Mount	6-SMD Gull Wing	600 V	Triac	1.18 V	6-SMD	1	60 mA	85 °C	-40 °C	UR VDE	1 kV/µs	220 µA	4170 Vrms	10 mA
ON Semiconductor MOC3051FM	Surface Mount	6-SMD Gull Wing	600 V	Triac	1.15 V	6-SMD	1	60 mA	85 °C	-40 °C		1 kV/µs	280 µA	7500 Vpk	15 mA
ON Semiconductor MOC3052VM	Through Hole	6-DIP	600 V	Triac	1.18 V	6-DIP	1	60 mA	85 °C	-40 °C	UR VDE	1 kV/µs	220 µA	4170 Vrms	10 mA	0.3 in	7.62 mm
ON Semiconductor MOC3052SR2VM	Surface Mount	6-SMD Gull Wing	600 V	Triac	1.18 V	6-SMD	1	60 mA	85 °C	-40 °C	UR VDE	1 kV/µs	220 µA	4170 Vrms	10 mA
ON Semiconductor MOC3051TVM	Through Hole	6-DIP	600 V	Triac	1.18 V	6-DIP	1	60 mA	85 °C	-40 °C	UR VDE	1 kV/µs	220 µA	4170 Vrms	15 mA		10.16 mm	10.16 mm
ON Semiconductor MOC3052VM_F132	Through Hole	6-DIP	600 V	Triac	1.18 V	6-DIP	1	60 mA	85 °C	-40 °C	UR VDE	1 kV/µs	220 µA	4170 Vrms	10 mA	0.3 in	7.62 mm
ON Semiconductor MOC3051TM	Through Hole	6-DIP	600 V	Triac	1.18 V	6-DIP	1	60 mA	85 °C	-40 °C		1 kV/µs	220 µA	4170 Vrms	15 mA		10.16 mm	10.16 mm
ON Semiconductor MOC3051VM	Through Hole	6-DIP	600 V	Triac	1.18 V	6-DIP	1	60 mA	85 °C	-40 °C	UR VDE	1 kV/µs	220 µA	4170 Vrms	15 mA	0.3 in	7.62 mm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MOC3052M Series

The MOC3051M, MOC3052M and MOC3053M consist of a GaAs infrared emitting diode optically coupled to a non-zerocrossing silicon bilateral AC switch (triac). These devices isolate low voltage logic from 115 VACand 240 VAClines to provide random phase control of high current triacs or thyristors. These devices feature greatly enhanced static dv/dt capability to ensure stable switching performance of inductive loads.

Documents

Technical documentation and resources

No documents available