Discrete Semiconductor Products

SI5459DU-T1-GE3

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MOSFET P-CH 20V 8A PPAK

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Discrete Semiconductor Products

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MOSFET P-CH 20V 8A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SI5459DU-T1-GE3

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	26 nC
Input Capacitance (Ciss) (Max) @ Vds	665 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® ChipFET™ Single
Power Dissipation (Max)	3.5 W, 10.9 W
Rds On (Max) @ Id, Vgs [Max]	52 mOhm
Supplier Device Package	PowerPAK® ChipFET™ Single
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Mounting Type	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SI5459DU-T1-GE3	Surface Mount	12 V	52 mOhm	2.5 V 4.5 V	PowerPAK® ChipFET™ Single	3.5 W 10.9 W	1.4 V	665 pF	PowerPAK® ChipFET™ Single	150 °C	-50 °C	P-Channel	20 V	26 nC	MOSFET (Metal Oxide)	8 A

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General part information

P-Channel 20 V 8A (Tc) 3.5W (Ta), 10.9W (Tc) Surface Mount PowerPAK® ChipFET™ Single

Technical documentation and resources