VS-GB50TP120N

Obsolete

IGBT MOD 1200V 100A INT-A-PAK

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Discrete Semiconductor Products

Obsolete

IGBT MOD 1200V 100A INT-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GB50TP120N

Configuration	Half Bridge
Current - Collector (Ic) (Max) [Max]	100 A
Current - Collector Cutoff (Max) [Max]	5 mA
Input	Standard
Input Capacitance (Cies) @ Vce	4.29 nF
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	150 °C
Package / Case	INT-A-PAK (3 + 4)
Power - Max [Max]	446 W
Supplier Device Package	INT-A-PAK
Vce(on) (Max) @ Vge, Ic	2.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	Configuration	Package / Case	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Operating Temperature	Input Capacitance (Cies) @ Vce	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]
Vishay General Semiconductor - Diodes Division VS-GB50TP120N	5 mA	1200 V	Standard	Half Bridge	INT-A-PAK (3 + 4)	2.15 V	INT-A-PAK	150 °C	4.29 nF	Chassis Mount	446 W	100 A
Vishay General Semiconductor - Diodes Division VS-GB50NA120UX	50 µA	1200 V	Standard	Single	SOT-227-4 miniBLOC	2.8 V	SOT-227			Chassis Mount	431 W	84 A	NPT	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division VS-GB50YF120N	250 µA	1200 V	Standard		Module		ECONO2 4PACK	150 °C		Chassis Mount	330 W	66 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module Half Bridge 1200 V 100 A 446 W Chassis Mount INT-A-PAK

Technical documentation and resources

No documents available