VS-GB50YF120N

Obsolete

IGBT MOD 1200V 66A ECONO2 4PACK

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Discrete Semiconductor Products

Obsolete

IGBT MOD 1200V 66A ECONO2 4PACK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-GB50YF120N

Current - Collector (Ic) (Max) [Max]	66 A
Current - Collector Cutoff (Max) [Max]	250 µA
Input	Standard
Mounting Type	Chassis Mount
NTC Thermistor	False
Operating Temperature	150 °C
Package / Case	Module
Power - Max [Max]	330 W
Supplier Device Package	ECONO2 4PACK
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Input	Configuration	Package / Case	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Operating Temperature	Input Capacitance (Cies) @ Vce	Mounting Type	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	IGBT Type	Operating Temperature [Max]	Operating Temperature [Min]
Vishay General Semiconductor - Diodes Division VS-GB50TP120N	5 mA	1200 V	Standard	Half Bridge	INT-A-PAK (3 + 4)	2.15 V	INT-A-PAK	150 °C	4.29 nF	Chassis Mount	446 W	100 A
Vishay General Semiconductor - Diodes Division VS-GB50NA120UX	50 µA	1200 V	Standard	Single	SOT-227-4 miniBLOC	2.8 V	SOT-227			Chassis Mount	431 W	84 A	NPT	150 °C	-40 °C
Vishay General Semiconductor - Diodes Division VS-GB50YF120N	250 µA	1200 V	Standard		Module		ECONO2 4PACK	150 °C		Chassis Mount	330 W	66 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

IGBT Module 1200 V 66 A 330 W Chassis Mount ECONO2 4PACK

Technical documentation and resources

No documents available