Discrete Semiconductor Products

SIA456DJ-T1-GE3

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MOSFET N-CH 200V 2.6A PPAK SC70

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Discrete Semiconductor Products

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MOSFET N-CH 200V 2.6A PPAK SC70

Technical Specifications

Parameters and characteristics for this part

Specification	SIA456DJ-T1-GE3

Current - Continuous Drain (Id) @ 25°C	2.6 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	350 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max) @ Id, Vgs	1.38 Ohm
Supplier Device Package	PowerPAK® SC-70-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	1.4 V

Part	Technology	Mounting Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Vgs (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
Vishay General Semiconductor - Diodes Division SIA456DJ-T1-GE3	MOSFET (Metal Oxide)	Surface Mount	3.5 W 19 W	350 pF	PowerPAK® SC-70-6	16 V	1.4 V	200 V	1.8 V 4.5 V	PowerPAK® SC-70-6	-55 °C	150 °C	1.38 Ohm	N-Channel	14.5 nC	2.6 A
Vishay General Semiconductor - Diodes Division SIA456DJ-T3-GE3	MOSFET (Metal Oxide)	Surface Mount	3.5 W 19 W	350 pF	PowerPAK® SC-70-6	16 V	1.4 V	200 V	1.8 V 4.5 V	PowerPAK® SC-70-6	-55 °C	150 °C	1.38 Ohm	N-Channel	14.5 nC	1.1 A 2.6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 200 V 2.6A (Tc) 3.5W (Ta), 19W (Tc) Surface Mount PowerPAK® SC-70-6

Technical documentation and resources