SIA456 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 200V 2.6A PPAK SC70
| Part | Technology | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Vgs (Max) | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | FET Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Surface Mount | 3.5 W 19 W | 350 pF | PowerPAK® SC-70-6 | 16 V | 1.4 V | 200 V | 1.8 V 4.5 V | PowerPAK® SC-70-6 | -55 °C | 150 °C | 1.38 Ohm | N-Channel | 14.5 nC | 2.6 A |
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | Surface Mount | 3.5 W 19 W | 350 pF | PowerPAK® SC-70-6 | 16 V | 1.4 V | 200 V | 1.8 V 4.5 V | PowerPAK® SC-70-6 | -55 °C | 150 °C | 1.38 Ohm | N-Channel | 14.5 nC | 1.1 A 2.6 A |