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TO-236AB
Discrete Semiconductor Products

NXV65UPR

Active
Nexperia USA Inc.

TRANSISTOR MOSFET P-CHANNEL 20V 2.1A 3-PIN SOT-23

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TO-236AB
Discrete Semiconductor Products

NXV65UPR

Active
Nexperia USA Inc.

TRANSISTOR MOSFET P-CHANNEL 20V 2.1A 3-PIN SOT-23

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNXV65UPR
Current - Continuous Drain (Id) @ 25°C2.1 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]1.8 V
Drive Voltage (Max Rds On, Min Rds On) [Min]4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs8.7 nC
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)340 mW, 2.1 W
Rds On (Max) @ Id, Vgs70 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.30
10$ 0.21
100$ 0.11
500$ 0.09
1000$ 0.06
Digi-Reel® 1$ 0.30
10$ 0.21
100$ 0.11
500$ 0.09
1000$ 0.06
N/A 37166$ 0.46
Tape & Reel (TR) 3000$ 0.05
6000$ 0.05
9000$ 0.05

Description

General part information

NXV65UP Series

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.