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20 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs | Technology | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Vgs (Max) [Max] | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 2.1 W 340 mW | 8.7 nC | MOSFET (Metal Oxide) | 70 mOhm | 1.8 V | 4.5 V | 8 V | 1 V | 20 V | SC-59 SOT-23-3 TO-236-3 | 150 °C | -55 °C | P-Channel | 2.1 A | Surface Mount | TO-236AB |