Discrete Semiconductor Products
STW31N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.124 OHM TYP., 22 A MDMESH M5 POWER MOSFET IN TO-247 PACKAGE
Discrete Semiconductor Products
STW31N65M5
ActiveSTMicroelectronics
N-CHANNEL 650 V, 0.124 OHM TYP., 22 A MDMESH M5 POWER MOSFET IN TO-247 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STW31N65M5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 22 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 816 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs | 148 mOhm |
| Supplier Device Package | TO-247-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 4.65 | |
Description
General part information
STW31N65M5 Series
These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting products offer extremely low on-resistance, making them particularly suitable for applications requiring high power and superior efficiency.
Documents
Technical documentation and resources