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ISOTOP
Discrete Semiconductor Products

STE139N65M5

Obsolete
STMicroelectronics

MOSFET N-CH 650V 130A ISOTOP

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ISOTOP
Discrete Semiconductor Products

STE139N65M5

Obsolete
STMicroelectronics

MOSFET N-CH 650V 130A ISOTOP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTE139N65M5
Current - Continuous Drain (Id) @ 25°C130 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]363 nC
Input Capacitance (Ciss) (Max) @ Vds15600 pF
Mounting TypeChassis Mount
Operating Temperature150 °C
Package / CaseISOTOP
Power Dissipation (Max)672 W
Rds On (Max) @ Id, Vgs17 mOhm
Supplier Device PackageISOTOP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 24.00

Description

General part information

STE1 Series

N-Channel 650 V 130A (Tc) 672W (Tc) Chassis Mount ISOTOP

Documents

Technical documentation and resources

No documents available