Specification	APT66M60B2

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	330 nC
Input Capacitance (Ciss) (Max) @ Vds	13190 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max)	1135 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	T-MAX™ [B2]
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

APT66M60 Series

Part	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Microchip Technology APT66M60B2	1135 W	-55 °C	150 °C	MOSFET (Metal Oxide)	100 mOhm	5 V	TO-247-3 Variant	T-MAX™ [B2]	330 nC	Through Hole	10 V	600 V	N-Channel	70 A	13190 pF	30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	30	$ 19.54

General part information

Fast switching with low EMI/RFI

Low RDS(on)

Ultra low Crss for improved noise immunity

Technical documentation and resources