Discrete Semiconductor Products

SSM5G10TU(TE85L,F)

Obsolete

MOSFET P-CH 20V 1.5A UFV

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 20V 1.5A UFV

Technical Specifications

Parameters and characteristics for this part

Specification	SSM5G10TU(TE85L,F)

Current - Continuous Drain (Id) @ 25°C	1.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4 V, 1.8 V
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD (5 Leads), Flat Leads
Power Dissipation (Max)	500 mW
Rds On (Max) @ Id, Vgs	213 mOhm
Supplier Device Package	UFV
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	8 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Vgs (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Current - Continuous Drain (Id) @ 25°C	FET Feature	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Package / Case
Toshiba Semiconductor and Storage SSM5G10TU(TE85L,F)	150 °C	MOSFET (Metal Oxide)	UFV	20 V	500 mW	8 V	Surface Mount	250 pF	P-Channel	1.5 A	Schottky Diode (Isolated)	1.8 V 4 V	1 V	6.4 nC	213 mOhm	6-SMD (5 Leads) Flat Leads

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 1.5A (Ta) 500mW (Ta) Surface Mount UFV

Technical documentation and resources