SSM5G10 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET P-CH 20V 1.5A UFV
| Part | Operating Temperature | Technology | Supplier Device Package | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Vgs (Max) [Max] | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | FET Type | Current - Continuous Drain (Id) @ 25°C | FET Feature | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 150 °C | MOSFET (Metal Oxide) | UFV | 20 V | 500 mW | 8 V | Surface Mount | 250 pF | P-Channel | 1.5 A | Schottky Diode (Isolated) | 1.8 V 4 V | 1 V | 6.4 nC | 213 mOhm | 6-SMD (5 Leads) Flat Leads |