Discrete Semiconductor Products

SSM6L56FE,LM

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HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)

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Discrete Semiconductor Products

Active

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH + P-CH MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L56FE,LM

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
FET Feature	1.5 V
Gate Charge (Qg) (Max) @ Vgs	1 nC
Input Capacitance (Ciss) (Max) @ Vds	55 pF, 100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-563, SOT-666
Power - Max [Max]	150 mW
Rds On (Max) @ Id, Vgs	235 mOhm, 390 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Operating Temperature	FET Feature	FET Feature	Mounting Type	Configuration	Drain to Source Voltage (Vdss)	Supplier Device Package	Power - Max [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage SSM6L56FE,LM	800 mA	SOT-563 SOT-666	MOSFET (Metal Oxide)	150 °C	Logic Level Gate	1.5 V	Surface Mount	N and P-Channel	20 V	ES6	150 mW	235 mOhm 390 mOhm	1 nC	1 V	55 pF 100 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)

Technical documentation and resources