High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 20 V/-20 V, 0.8 A/-0.8 A, 0.235 Ω@4.5V/0.39 Ω@4.5V, SOT-563(ES6)
| Part | Current - Continuous Drain (Id) @ 25°C | Package / Case | Technology | Operating Temperature | FET Feature | FET Feature | Mounting Type | Configuration | Drain to Source Voltage (Vdss) | Supplier Device Package | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 800 mA | SOT-563 SOT-666 | MOSFET (Metal Oxide) | 150 °C | Logic Level Gate | 1.5 V | Surface Mount | N and P-Channel | 20 V | ES6 | 150 mW | 235 mOhm 390 mOhm | 1 nC | 1 V | 55 pF 100 pF |