Discrete Semiconductor Products

SI4346DY-T1-GE3

Obsolete

MOSFET N-CH 30V 5.9A 8SO

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 5.9A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4346DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	5.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max) [Max]	1.31 W
Rds On (Max) @ Id, Vgs	23 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SI4346DY-T1-E3	23 mOhm	1.31 W	-55 °C	150 °C	30 V	Surface Mount	N-Channel	2 V	8-SOIC	MOSFET (Metal Oxide)	12 V	5.9 A	8-SOIC	3.9 mm	0.154 in	10 nC	10 V	2.5 V
Vishay General Semiconductor - Diodes Division SI4346DY-T1-GE3	23 mOhm	1.31 W	-55 °C	150 °C	30 V	Surface Mount	N-Channel	2 V	8-SOIC	MOSFET (Metal Oxide)	12 V	5.9 A	8-SOIC	3.9 mm	0.154 in	10 nC	10 V	2.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 5.9A (Ta) 1.31W (Ta) Surface Mount 8-SOIC

Technical documentation and resources