SI4346 Series

Catalog

MOSFET N-CH 30V 5.9A 8SO

Part	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SI4346DY-T1-E3	23 mOhm	1.31 W	-55 °C	150 °C	30 V	Surface Mount	N-Channel	2 V	8-SOIC	MOSFET (Metal Oxide)	12 V	5.9 A	8-SOIC	3.9 mm	0.154 in	10 nC	10 V	2.5 V
Vishay General Semiconductor - Diodes Division SI4346DY-T1-GE3	23 mOhm	1.31 W	-55 °C	150 °C	30 V	Surface Mount	N-Channel	2 V	8-SOIC	MOSFET (Metal Oxide)	12 V	5.9 A	8-SOIC	3.9 mm	0.154 in	10 nC	10 V	2.5 V