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ONSEMI BD243CG
Discrete Semiconductor Products

BD243CG

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 100 V, 6 A, 65 W, TO-220, THROUGH HOLE

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ONSEMI BD243CG
Discrete Semiconductor Products

BD243CG

Active
ON Semiconductor

BIPOLAR (BJT) SINGLE TRANSISTOR, GENERAL PURPOSE, NPN, 100 V, 6 A, 65 W, TO-220, THROUGH HOLE

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Technical Specifications

Parameters and characteristics for this part

SpecificationBD243CG
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]15
Frequency - Transition3 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-65 °C
Package / CaseTO-220-3
Power - Max [Max]65 W
Supplier Device PackageTO-220
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.80
10$ 1.15
100$ 0.77
500$ 0.61
1000$ 0.56
2000$ 0.51
5000$ 0.46
10000$ 0.45
NewarkEach 100$ 0.78
500$ 0.69
1000$ 0.60
2500$ 0.48
10000$ 0.47
ON SemiconductorN/A 1$ 0.48

Description

General part information

BD243C Series

The 6 A, 100 V PNP Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices.