BD243C Series

6.0 A, 100 V NPN Bipolar Power Transistor

Catalog

6.0 A, 100 V NPN Bipolar Power Transistor

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Transistor Type	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Mounting Type	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
ON Semiconductor BD243CG	100 V	150 °C	-65 °C	TO-220	NPN	65 W	1.5 V	3 MHz	Through Hole	TO-220-3	15
ON Semiconductor BD243B	80 V			TO-220-3	NPN	65 W	1.5 V		Through Hole	TO-220-3	15	150 °C

Catalog

6.0 A, 100 V NPN Bipolar Power Transistor

Key Features

• Collector - Emitter Saturation Voltage -VCE(sat)= 1.5 Vdc (Max) @ IC= 6.0 Adc

• Collector Emitter Sustaining Voltage -VCEO(sus)= 80 Vdc (Min) BD243B, BD244BVCEO(sus)= 100 Vdc (Min) - BD243C, BD244C

• High Current Gain Bandwidth ProductfT= 3.0 MHz (Min) @ IC= 500 mAdc

• Compact TO-220 AB Package

• Pb-Free Packages are Available

Description

The 6 A, 100 V PNP Bipolar Power Transistor is designed for use in general purpose amplifier and switching applications. BD243B, BD243C (NPN); BD244B, BD244C (PNP) are complementary devices.