EVSTDRIVEG600DM
ActiveDEMONSTRATION BOARD FOR STDRIVEG600 600V HIGH-SPEED HALF-BRIDGE GATE DRIVER WITH MDMESH DM2 POWER MOSFET
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EVSTDRIVEG600DM
ActiveDEMONSTRATION BOARD FOR STDRIVEG600 600V HIGH-SPEED HALF-BRIDGE GATE DRIVER WITH MDMESH DM2 POWER MOSFET
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Technical Specifications
Parameters and characteristics for this part
| Specification | EVSTDRIVEG600DM |
|---|---|
| Contents | Board(s) |
| Embedded | False |
| Function | Gate Driver |
| Primary Attributes [Max] | 20 V |
| Primary Attributes [Min] | 4.75 V |
| Secondary Attributes | On-Board Test Points |
| Type | Power Management |
| Utilized IC / Part | STDRIVEG600 |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
EVSTDRIVEG600DM Series
The STDRIVEG600 is a high-speed half-bridge gate driver optimized to drive high-voltage N-channel power MOSFETs or enhanced mode GaN HEMTs. It features an integrated bootstrap diode and allows supplying external switches up to 20 V.
The EVSTDRIVEG600DM board is easy to use and quick and adapt for evaluating the characteristics of STDRIVEG600 driving 600V MDmesh DM2 Power MOSFET with fast recovery diode.
It provides an on-board programmable dead time generator and a 3.3 V linear voltage regulator to supply external logic controllers like microcontrollers.
Documents
Technical documentation and resources