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Discrete Semiconductor Products

APTDF30H1201G

Active
Microchip Technology

BRIDGE RECTIFIER DIODE, 1 PHASE, 43A, 1200V V(RRM), SILICON

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Discrete Semiconductor Products

APTDF30H1201G

Active
Microchip Technology

BRIDGE RECTIFIER DIODE, 1 PHASE, 43A, 1200V V(RRM), SILICON

Technical Specifications

Parameters and characteristics for this part

SpecificationAPTDF30H1201G
Current - Average Rectified (Io)43 A
Current - Reverse Leakage @ Vr100 µA
Diode TypeSingle Phase
Mounting TypeChassis Mount
Operating Temperature [Max]175 °C
Operating Temperature [Min]-40 C
Package / CaseSP1
Supplier Device PackageSP1
TechnologyStandard
Voltage - Forward (Vf) (Max) @ If3.1 V
Voltage - Peak Reverse (Max) [Max]1.2 kV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 25$ 42.77
Microchip DirectN/A 1$ 42.77
50$ 35.64
100$ 31.36
250$ 30.51
500$ 29.65
1000$ 28.51
5000$ 26.80

Description

General part information

APTDF30H1201G-Module Series

* FRED Si diode

* Ultra fast recovery times

* Soft recovery characteristics