Discrete Semiconductor Products

SI5499DC-T1-E3

Obsolete

MOSFET P-CH 8V 6A 1206-8 CHIPFET

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 8V 6A 1206-8 CHIPFET

Technical Specifications

Parameters and characteristics for this part

Specification	SI5499DC-T1-E3

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	8 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	35 nC
Input Capacitance (Ciss) (Max) @ Vds	1290 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max)	6.2 W, 2.5 W
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	1206-8 ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	5 V
Vgs(th) (Max) @ Id	800 mV

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI5499DC-T1-GE3	-55 °C	150 °C	5 V	1290 pF	800 mV	8 V	1206-8 ChipFET™	6 A	2.5 W 6.2 W	MOSFET (Metal Oxide)	P-Channel	1.5 V 4.5 V	Surface Mount	35 nC	36 mOhm
Vishay General Semiconductor - Diodes Division SI5499DC-T1-E3	-55 °C	150 °C	5 V	1290 pF	800 mV	8 V	1206-8 ChipFET™	6 A	2.5 W 6.2 W	MOSFET (Metal Oxide)	P-Channel	1.5 V 4.5 V	Surface Mount	35 nC	36 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 8 V 6A (Tc) 2.5W (Ta), 6.2W (Tc) Surface Mount 1206-8 ChipFET™

Technical documentation and resources