SI5499 Series

Catalog

MOSFET P-CH 8V 6A 1206-8 CHIPFET

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI5499DC-T1-GE3	-55 °C	150 °C	5 V	1290 pF	800 mV	8 V	1206-8 ChipFET™	6 A	2.5 W 6.2 W	MOSFET (Metal Oxide)	P-Channel	1.5 V 4.5 V	Surface Mount	35 nC	36 mOhm
Vishay General Semiconductor - Diodes Division SI5499DC-T1-E3	-55 °C	150 °C	5 V	1290 pF	800 mV	8 V	1206-8 ChipFET™	6 A	2.5 W 6.2 W	MOSFET (Metal Oxide)	P-Channel	1.5 V 4.5 V	Surface Mount	35 nC	36 mOhm