Discrete Semiconductor Products
STD36P4LLF6
ActiveSTMicroelectronics
POWER MOSFET, P CHANNEL, 40 V, 36 A, 0.0175 OHM, TO-252 (DPAK), SURFACE MOUNT
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Discrete Semiconductor Products
STD36P4LLF6
ActiveSTMicroelectronics
POWER MOSFET, P CHANNEL, 40 V, 36 A, 0.0175 OHM, TO-252 (DPAK), SURFACE MOUNT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STD36P4LLF6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 36 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC |
| Mounting Type | Surface Mount |
| Operating Temperature | 175 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) @ Id, Vgs | 20.5 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD36P4LLF6 Series
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages.
Documents
Technical documentation and resources