Discrete Semiconductor Products
2STD1665T4
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 65 V, 6 A, 15 W, TO-252 (DPAK), SURFACE MOUNT
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Discrete Semiconductor Products
2STD1665T4
ActiveSTMicroelectronics
BIPOLAR (BJT) SINGLE TRANSISTOR, NPN, 65 V, 6 A, 15 W, TO-252 (DPAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | 2STD1665T4 |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 50 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 150 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 15 W |
| Supplier Device Package | DPAK |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 380 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 65 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2STD1665 Series
The device is a low voltage NPN transistor with exceptional high gain performance coupled with very low saturation voltage. It is designed in planar technology with "base island" layout.
Documents
Technical documentation and resources