Discrete Semiconductor Products

BUK954R4-80E,127

Obsolete

NXP USA Inc.

MOSFET N-CH 80V 120A TO220AB

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Discrete Semiconductor Products

BUK954R4-80E,127

Obsolete

NXP USA Inc.

MOSFET N-CH 80V 120A TO220AB

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BUK954R4-80E,127

Current - Continuous Drain (Id) (Tc)	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	123 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	17130 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	349 W
Qualification	AEC-Q101
Rds On (Max)	4.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2.1 V

BUK95 Series

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Grade	Vgs (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Package / Case	Package Name	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Qualification	Rds On (Max)	Vgs(th) (Max)	FET Type	Current - Continuous Drain (Id) (Tj)	Drive Voltage (Max Rds On, Min Rds On)
NXP USA Inc. BUK952R8-60E,127	349 W	17450 pF	Automotive	10 V	10 V	5 V	Through Hole	MOSFET (Metal Oxide)	60 V	TO-220-3	TO-220AB	120 A	-55 °C	175 °C	120 nC	AEC-Q101	2.6 mOhm	2.1 V	N-Channel
NXP USA Inc. BUK951R6-30E,127	349 W	16150 pF	Automotive	10 V	10 V	5 V	Through Hole	MOSFET (Metal Oxide)	30 V	TO-220-3	TO-220AB	120 A	-55 °C	175 °C	113 nC	AEC-Q101	1.4 mOhm	2.1 V	N-Channel
NXP USA Inc. BUK954R4-80E,127	349 W	17130 pF	Automotive	10 V	10 V	5 V	Through Hole	MOSFET (Metal Oxide)	80 V	TO-220-3	TO-220AB	120 A	-55 °C	175 °C	123 nC	AEC-Q101	4.2 mOhm	2.1 V	N-Channel
NXP USA Inc. BUK9509-75A,127	230 W	8840 pF	Automotive	10 V	10 V	4.5 V	Through Hole	MOSFET (Metal Oxide)	75 V	TO-220-3	TO-220AB		-55 °C	175 °C		AEC-Q101	8.5 mOhm	2 V	N-Channel	75 A
NXP USA Inc. BUK9506-55B,127	258 W	7565 pF	Automotive	15 V	10 V	4.5 V	Through Hole	MOSFET (Metal Oxide)	55 V	TO-220-3	TO-220AB	75 A	-55 °C	175 °C	60 nC	AEC-Q101	5.4 mOhm	2 V	N-Channel
NXP USA Inc. BUK9520-100A,127
NXP USA Inc. BUK9510-55A,127	200 W	4307 pF	Automotive	15 V	10 V	4.5 V	Through Hole	MOSFET (Metal Oxide)	55 V	TO-220-3	TO-220AB	75 A	-55 °C	175 °C	68 nC	AEC-Q101	9 mOhm	2 V	N-Channel
NXP USA Inc. BUK9523-75A,127	138 W	3120 pF	Automotive	10 V	10 V	4.5 V	Through Hole	MOSFET (Metal Oxide)	75 V	TO-220-3	TO-220AB	53 A	-55 °C	175 °C		AEC-Q101	22 mOhm	2 V	N-Channel
NXP USA Inc. BUK9508-55A,127	253 W	6021 pF	Automotive	15 V	10 V	4.5 V	Through Hole	MOSFET (Metal Oxide)	55 V	TO-220-3	TO-220AB	75 A	-55 °C	175 °C	92 nC	AEC-Q101	7.5 mOhm	2 V	N-Channel
NXP USA Inc. BUK9518-55,127	125 W	2600 pF		10 V			Through Hole	MOSFET (Metal Oxide)	55 V	TO-220-3	TO-220AB	57 A	-55 °C	175 °C			18 mOhm	2 V	N-Channel		5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

CAD

3D models and CAD resources for this part

Description

General part information

BUK95 Series

N-Channel 80 V 120A (Tc) 349W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources