BUK95 Series
Manufacturer: NXP USA Inc.
Beta
⌘K
MOSFET N-CH 60V 120A TO220AB
| Part | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Grade | Vgs (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Mounting Type | Technology | Drain to Source Voltage (Vdss) | Package / Case | Package Name | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Gate Charge (Max) | Qualification | Rds On (Max) | Vgs(th) (Max) | FET Type | Current - Continuous Drain (Id) (Tj) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | 349 W | 17450 pF | Automotive | 10 V | 10 V | 5 V | Through Hole | MOSFET (Metal Oxide) | 60 V | TO-220-3 | TO-220AB | 120 A | -55 °C | 175 °C | 120 nC | AEC-Q101 | 2.6 mOhm | 2.1 V | N-Channel | ||
NXP USA Inc. | 349 W | 16150 pF | Automotive | 10 V | 10 V | 5 V | Through Hole | MOSFET (Metal Oxide) | 30 V | TO-220-3 | TO-220AB | 120 A | -55 °C | 175 °C | 113 nC | AEC-Q101 | 1.4 mOhm | 2.1 V | N-Channel | ||
NXP USA Inc. | 349 W | 17130 pF | Automotive | 10 V | 10 V | 5 V | Through Hole | MOSFET (Metal Oxide) | 80 V | TO-220-3 | TO-220AB | 120 A | -55 °C | 175 °C | 123 nC | AEC-Q101 | 4.2 mOhm | 2.1 V | N-Channel | ||
 NXP USA Inc. | 230 W | 8840 pF | Automotive | 10 V | 10 V | 4.5 V | Through Hole | MOSFET (Metal Oxide) | 75 V | TO-220-3 | TO-220AB | -55 °C | 175 °C | AEC-Q101 | 8.5 mOhm | 2 V | N-Channel | 75 A | |||
NXP USA Inc. | 258 W | 7565 pF | Automotive | 15 V | 10 V | 4.5 V | Through Hole | MOSFET (Metal Oxide) | 55 V | TO-220-3 | TO-220AB | 75 A | -55 °C | 175 °C | 60 nC | AEC-Q101 | 5.4 mOhm | 2 V | N-Channel | ||
NXP USA Inc. | |||||||||||||||||||||
NXP USA Inc. | 200 W | 4307 pF | Automotive | 15 V | 10 V | 4.5 V | Through Hole | MOSFET (Metal Oxide) | 55 V | TO-220-3 | TO-220AB | 75 A | -55 °C | 175 °C | 68 nC | AEC-Q101 | 9 mOhm | 2 V | N-Channel | ||
NXP USA Inc. | 138 W | 3120 pF | Automotive | 10 V | 10 V | 4.5 V | Through Hole | MOSFET (Metal Oxide) | 75 V | TO-220-3 | TO-220AB | 53 A | -55 °C | 175 °C | AEC-Q101 | 22 mOhm | 2 V | N-Channel | |||
NXP USA Inc. | 253 W | 6021 pF | Automotive | 15 V | 10 V | 4.5 V | Through Hole | MOSFET (Metal Oxide) | 55 V | TO-220-3 | TO-220AB | 75 A | -55 °C | 175 °C | 92 nC | AEC-Q101 | 7.5 mOhm | 2 V | N-Channel | ||
NXP USA Inc. | 125 W | 2600 pF | 10 V | Through Hole | MOSFET (Metal Oxide) | 55 V | TO-220-3 | TO-220AB | 57 A | -55 °C | 175 °C | 18 mOhm | 2 V | N-Channel | 5 V |